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Report No.
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A Novel room temperature oxidation technique using hyperthermal broad atomic/molecular beams

Tagawa, Masahito*; Yokota, Kumiko*; Yoshigoe, Akitaka ; Teraoka, Yuden

Synchrotron radiation photoelectron spectroscopy (SR-PES) and crystal truncation rod (CTR) scattering profiles were used to investigate an ultra-thin SiO$$_{2}$$ overlayer on an Si(001) surface formed by a 5-eV-O-atom beam at room temperature. The SR-PES spectra indicated that the suboxides in the oxidized film formed by the O atom beams were concentrated on the SiO$$_{2}$$ surface rather than at the Si/SiO$$_{2}$$ interface. The CTR scattering data of the O-atom-beam oxidation film suggested a lower content of the SiO$$_{2}$$ ordered structure in the oxide film. An inverse diffusion of the interstitial Si atoms in the oxidation kinetics can explain the data.

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