Comparison of initial oxidation between Si(110) and Si(100) surfaces; From real-time photoemission spectroscopy

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka ; Narita, Yuzuru*

By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-162 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an O1s state with a weaker binding energy. As the oxidation proceeds, another O1s state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 162 reconstruction of the Si(110) surface.

Language	:	Japanese
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Meeting title	:	第82回研究集会「ゲート絶縁膜技術の展開と諸問題; Si(110)基板,窒素添加,メタルゲート」
Held date	:	2006/06
Location (city)	:	東広島
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Cooperating Institute	:	東北大学

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Registration No. : BB20060480
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