Real-time observation of initial thermal oxidation on Si(110)-162 surface by photoemission spectroscopy

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka ; Enta, Yoshiharu*; Narita, Yuzuru*

Initial thermal oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy with synchrotron radiation. The Si(110) initial oxidation is characterized by presence of a rapid oxidation just after the introduction of gaseous oxygen molecules. Peak separation of the O1s photoemission spectra suggests the presence of at least two distinct oxidation sites on the surface, which may reflect the complicated surface structure of the Si(110)-162 reconstruction.

Language	:	English
Journal	:	ECS Transactions
Volume	:	3
Number	:	2
Pages	:	p.311 - 316
Publication Year/Month	:	2006/00
Meeting title	:	210th Meeting of The Electrochemical Society
Held date	:	2006/10
Location (city)	:	Cancn
Location (country)	:	Mexico
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1149/1.2356291
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20060479
JAEA Abstracts No. : 35000518
Paper Submission No. : 1991

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