Growth of -FeSi thin films on -FeSi (110) substrates by molecular beam epitaxy

Muroga, Masataka*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Zhuravlev, A. V.; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Terai, Takayuki*

Semiconducting -FeSi has received much attention as a material for Si-based optoelectronic devices. There are a number of studies on heteroepitaxy of -FeSi film on Si. However, growth experiments of -FeSi film on single crystalline -FeSi substrate have not been investigated yet. Recently, single crystalline -FeSi with large growth facets by solution growth method using Ga solvent. By obtaining a smooth surface on the substrate, we have succeeded in growing -FeSi film on -FeSi(110) substrate using molecular-beam epitaxy.

Language	:	English
Journal	:	Thin Solid Films
Volume	:	515
Number	:	22
Pages	:	p.8197 - 8200
Publication Year/Month	:	2007/08
Meeting title	:	Asia-Pacific Conference on Semiconducting Silicides (APAC-SILICIDE 2006)
Held date	:	2006/07
Location (city)	:	Kyoto
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.tsf.2007.02.040
DOI for research data	:
Keywords	:	no keyword
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Registration No. : BB20060677
JAEA Abstracts No. : 35001521
Paper Submission No. : 3110

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