Photoluminescence characteristics of -FeSi films on SOI substrate

Shimura, Kenichiro*; Zhuravlev, A. V.; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Shamoto, Shinichi ; Hojo, Kiichi; Terai, Takayuki*

In order to improve PL characteristics of -FeSi film on SOI (silicon-on-insulator) substrate, a template method was employed to control the inter-diffusion processes at the interface of -FeSi/SOI. In contrast to the case without employing template layer, the template method employed in the present study was found to be effective to enhance PL intensity of -FeSi film formed on SOI substrate.

Language	:	English
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Meeting title	:	Asia-Pacific Conference on Semiconducting Silicides (APAC-SILICIDE 2006)
Held date	:	2006/07
Location (city)	:	Kyoto
Location (country)	:	Japan
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Keywords	:	no keyword
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Registration No. : BB20060676
JAEA Abstracts No. :
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