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Observation of initial oxidation process on Si(110)-16$$times$$2 by real-time photoemission spectroscopy, 1

Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka ; Narita, Yuzuru*

Initial oxidation processes of Si(110) surface have not been studied although they are important for the next generation device. Now we observed time evolution of oxygen coverage at the Si(110)-16$$times$$2 surface in the initial oxidation region by using real-time photoemission spectroscopy with synchrotron radiation. As a conclusion, rapid initial oxidation processes, in which several tens per cent of the surface was oxidized just after oxygen exposure, were found in experimental conditions of 813 K and oxygen pressure of 1.1$$times$$10$$^{-5}$$ Pa. Such a rapid initial oxidation process has not been observed in the initial oxidation of Si(100)-2$$times$$1 surface. This phenomenon may be related with adatom clusters, which exist periodically on the Si(110)-16$$times$$2 surface. For example, An adatom cluster, which consists of five Si atoms, shares 0.25 ML on the Si(110)-16$$times$$2 reconstruction surface in the pentagon-pair model. This model consistents with the initial oxygen coverage obtained in this experiment.

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