Observation of initial oxidation process on Si(110)-162 by real-time photoemission spectroscopy, 2

Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka 

Initial oxidation processes of ultra-thin oxide layers on Si(110)-162 surfaces have not been studied yet. Making clear the chemical reaction mechanisms is, however, important for device fabrication. We observed time evolution of oxide coverage on the Si(110)-162 surface at room temperature. The O1s photoemission spectrum increased with increasing oxygen dose and the peak position shifted to higher binding energy side at oxygen pressure of 1.110 Pa. This peak shift is responsible to two kinds of peak components and their independent time evolutions. Time evolution of each component, behaviour of Si2p spectrum, and thermal stability of the surface reveal that the oxidation of Si(110) surface has different characters in compared with that of Si(100) surface. These facts can be understood on the basis of adatom clusters on the Si(110) surface.