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Elucidation of mechanism of the decrease in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

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