Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature; Suboxide distribution and residual order structure

Tagawa, Masahito*; Sogo, Chie*; Yokota, Kumiko*; Yoshigoe, Akitaka ; Teraoka, Yuden; Shimura, Takayoshi*

Synchrotron radiation photoelectron spectroscopy (SR-PES) and crystal truncation rod (CTR) scattering profiles were used to investigate an ultrathin SiO $_{2}$ overlayer on an Si(001) surface formed by a 5 eV O-atom beam at room temperature. The SR-PES spectra indicated that the suboxides in the O-atom-beam oxidized film were concentrated on the SiO $_{2}$ surface rather than at the Si/SiO $_{2}$ interface. The CTR scattering data of the O-atom-beam oxidation film had a lower intensity near (1 1 L) (0.3-L-0.8), suggesting a lower content of the SiO $_{2}$ ordered structure in the oxide film. An inverse diffusion of the interstitial Si atoms in the oxidation kinetics can explain the data.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	88
Number	:	13
Pages	:	p.133512_1 - 133512_3
Publication Year/Month	:	2006/03
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Paper URL	:	https://doi.org/10.1063/1.2190467
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	神戸大学

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Registration No. : AA20060269
JAEA Abstracts No. :
Paper Submission No. : 3343

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