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Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffraction

Takahashi, Masamitsu; Mizuki, Junichiro

Recently, sophisticated surface analysis tools including scanning probes and diffraction techniques have been applied to GaAs surfaces towards the understanding of the atomistics of the MBE growth process. Under growth conditions, GaAs surfaces are exposed to the gas phase of source materials and thus exchanges atoms with the environment. This situation brings abouta variety of surface reconstructions whose stoichiometry is different from that of the bulk, depending on growth parameters. Determination of the surface reconstructions under growth conditions is a key to understand the elemental process of MBE. In this paper, we report on in situ X-ray analysis of the (2$$times$$4) structure under true growth conditions and its structural changes induced by As incorporation.

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Category:Crystallography

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