Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

Chen, Z. Q.*; Maekawa, Masaki; Kawasuso, Atsuo; Naramoto, Hiroshi

We implanted B, O, Al, and P ions into ZnO (Dose: 4E+15/cm). The thermal recovery of implantation-induced defects were studied using a slow positron beam. S parameters show much increase after ion implantation, indication introduction of vacancy defects. The thermal recovery of these vacancies induced by different ions shows much difference. For O implantation, vacancy clusters disappear rapidly after annealing up to about 700C. For the lighter ion B implantation, however, vacancy clusters grow to a larger size at 500C. The vacancies begin to recover and disappear after further annealing up to 900C. For the Al implantation, the vacancies grow into even a much larger size after annealing at 600C, and they are annealed out at 900C. However, for the P -implanted sample, it was shown that a much weaker agglomeration process of the vacancy clusters compared with Al implantation. A higher annealing temperature of 1100C is needed to fully remove these vacancies.