Refine your search�ソスF     
Report No.

Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

Chen, Z. Q.*; Maekawa, Masaki; Kawasuso, Atsuo; Naramoto, Hiroshi

We implanted B$$^{+}$$, O$$^{+}$$, Al$$^{+}$$, and P$$^{+}$$ ions into ZnO (Dose: 4E+15/cm$$^{2}$$). The thermal recovery of implantation-induced defects were studied using a slow positron beam. S parameters show much increase after ion implantation, indication introduction of vacancy defects. The thermal recovery of these vacancies induced by different ions shows much difference. For O$$^{+}$$ implantation, vacancy clusters disappear rapidly after annealing up to about 700$$^{circ}$$C. For the lighter ion B$$^{+}$$ implantation, however, vacancy clusters grow to a larger size at 500$$^{circ}$$C. The vacancies begin to recover and disappear after further annealing up to 900$$^{circ}$$C. For the Al$$^{+}$$ implantation, the vacancies grow into even a much larger size after annealing at 600$$^{circ}$$C, and they are annealed out at 900$$^{circ}$$C. However, for the P$$^{+}$$ -implanted sample, it was shown that a much weaker agglomeration process of the vacancy clusters compared with Al$$^{+}$$ implantation. A higher annealing temperature of 1100$$^{circ}$$C is needed to fully remove these vacancies.



- Accesses






[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.