Formation of silicone carbide membrane by radiation curing of polycarbosilane and polyvinylsilane and its gas separation up to 250 $^{circ}$ C

Wach, R. A.; Sugimoto, Masaki; Yoshikawa, Masahito

Silicon carbide ceramic coating was developed from precursor polymer blend of polycarbosilane and polyvinylsilane on porous alumina substrate by radiation curing. The polymers were crosslinked with oxygen present in the atmosphere during irradiation and pyrolyzed at 850 $^{circ}$ C in order to convert the polymer into SiC ceramics. Fabricated SiC film was employed as a membrane for gas separation achieving high separation ratio of 206 for H $_{2}$ and 241 for He over the nitrogen at 250 $^{circ}$ C.

Language	:	English
Journal	:	Journal of the American Ceramic Society
Volume	:	90
Number	:	1
Pages	:	p.275 - 278
Publication Year/Month	:	2007/01
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Paper URL	:	https://doi.org/10.1111/j.1551-2916.2006.01376.x
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	電子加速器
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Article of JAEA R&D Review	:
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:81.53 Category:Materials Science, Ceramics
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Registration No. : AA20060591
JAEA Abstracts No. : 35000151
Paper Submission No. : 1703

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Formation of silicone carbide membrane by radiation curing of polycarbosilane and polyvinylsilane and its gas separation up to 250C

Formation of silicone carbide membrane by radiation curing of polycarbosilane and polyvinylsilane and its gas separation up to 250 $^{circ}$ C