Development of the external cooling device to increase the Productivity of Neutron-Transmutation-Doped Silicon Semiconductor (NTD-Si) (Joint research)

Hirose, Akira; Wada, Shigeru; Sasajima, Fumio; Kusunoki, Tsuyoshi ; Kameyama, Iwao*; Aizawa, Ryoji*; Kikuchi, Naoyuki*

It is expected that the demand for NTD-Si increases rapidly because of recent productive increase of hybrid-cars. In order to meet the demand, we have investigated the expansion technology of the NTD-Si productivity using the JRR3. This report describes the production of equipment for the external cooling device while proposed as one of the result of the investigation for the JRR-3 uniformity irradiation equipment. After an ingot was irradiated once, it is turned over manually and irradiated again in order irradiate the ingot uniformly. With the conventional equipment, it was necessary to wait the radioactivity of ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. It was effective to shorten the waiting period by using an external cooling device for production increase of NTD-Si. It is expected that the productivity of NTD-Si will be increased by using the external cooling device.