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$$^{30}$$Si-enriched thin film for local neutron transmutation doping

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori  ; Sasase, Masato*; Esaka, Fumitaka  ; Yamaguchi, Kenji; Udono, Haruhiko*; Shamoto, Shinichi  ; Yokoyama, Atsushi; Hojo, Kiichi

$$^{30}$$Si in natural Si has been widely used for a doping source, since $$^{30}$$Si can be transmuted into $$^{31}$$P by thermal neutron (Neutron Transmutation Doping, NTD). In the present study, $$^{30}$$Si-enriched thin film has been fabricated in order to demonstrate the local NTD. The $$^{30}$$Si-enriched film with thickness of 100 nm was deposited on the Si(100) substrate by plasma enhanced chemical vapor deposition using $$^{30}$$Si-enriched SiF$$_{4}$$ as the source gases. Nanostructure of films and changes of electronic properties by the neutron irradiation will be discussed.

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Japanese

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Meeting title

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第17回日本化学会関東支部茨城地区研究交流会

Held date

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2006/11

Location (city)

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日立

Location (country)

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日本

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Keywords

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no keyword

Research Facility

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JRR-3M(研究炉3)  

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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若狭湾エネルギー研究センター

Accesses

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- Accesses

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