First-principles molecular dynamics study of SiO $_{2}$ /4H-SiC(0001) interface oxidation process; Formation of carbon cluster

Onuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*

no abstracts in English

Language	:	Japanese
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Meeting title	:	シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会第15回講演会
Held date	:	2006/11
Location (city)	:	高崎
Location (country)	:	日本
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Keywords	:	no keyword
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Cooperating Institute	:	電力中央研究所

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Registration No. : BB20062483
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First-principles molecular dynamics study of SiO/4H-SiC(0001) interface oxidation process; Formation of carbon cluster

First-principles molecular dynamics study of SiO $_{2}$ /4H-SiC(0001) interface oxidation process; Formation of carbon cluster