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Report No.
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Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure

Hayakawa, Ryoma*; Nakae, Mari*; Yoshimura, Takeshi*; Ashida, Atsushi*; Fujimura, Norifumi*; Uehara, Tsuyoshi*; Tagawa, Masahito*; Teraoka, Yuden

A structural analysis and dielectric property measurements of silicon nitride films fabricated using atmospheric pressure (AP) plasma were carried out, and the results were compared to a radio frequency (RF) plasma case. Using AP plasma, 1.8-nm-thick films composed of Si$$_{3}$$N$$_{3.5}$$O$$_{0.7}$$ were obtained in the temperature range from 298 to 773 K. X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry revealed 10% more nitrogen atoms corresponding to the NSi$$_{3}$$ bond in the film using AP plasma than those using RF plasma. In the temperature range, the leakage current densities were not affected by the temperature. Films fabricated at 298 K showed leakage current density of as low as 7$$times$$10$$^{-2}$$A/cm$$^{2}$$ at 5MV/cm. This value was one order of magnitude lower than that using RF plasma.

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Category:Physics, Applied

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