Effect of pressure on the electronic state in antiferromagnets UPtSi and UIrSi

Ikeda, Shugo; Nakashima, Miho*; Matsuda, Tatsuma; Tateiwa, Naoyuki ; Yamamoto, Etsuji ; Nakamura, Akio; Haga, Yoshinori ; Hedo, Masato*; Uwatoko, Yoshiya*; Onuki, Yoshichika*

We measured the electrical resistivity under pressures up to 8 GPa in antiferromagnets UPtSi ( $T_{rm N}$ = 34 K) and UIrSi ( $T_{rm N}$ = 6.3 K). The Nel temperature is found to decrease slowly as a function of pressure in UPtSi. The critical pressure $P_{rm c}$ ( $T_{rm N}rightarrow$ 0) is roughly estimated as $P_{rm c}$ 10 GPa. On the other hand, the Nel temperature is unchanged in UIrSi.

Language	:	English
Journal	:	Journal of the Physical Society of Japan
Volume	:	75
Number	:	12
Pages	:	p.125003_1 - 125003_2
Publication Year/Month	:	2006/12
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Paper URL	:	https://doi.org/10.1143/JPSJ.75.125003
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Keywords	:	no keyword
Research Facility	:	第4研究棟
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Article of JAEA R&D Review	:
Cooperating Institute	:	東京大学物性研究所; 信州大学; 大阪大学

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Registration No. : AA20060673
JAEA Abstracts No. : 35000160
Paper Submission No. : 1712

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