Real-time monitoring of interfacial strained Si layers during oxidation on Si(001) surface by XPS using high brightness synchrotron radiation

Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

High resolution O1s and Si2p photoelectron spectroscopy using synchrotron radiation was employed to clarify layer-by-layer oxidation reaction mechanisms at an Si(001) surface from a viewpoint of point-defect generation due to oxidation-induced strain at SiO/Si interface. Beta- and alpha-Si components in Si2p spectra, which are assigned to the first and second strained Si layers, show significant decrease during step-by-step temperature increase. Because of the band bending measured by O1s peak position, the observed decrease of beta-Si and alpha-Si components is assigned to not only by a structural relaxation of SiO network due to thermal annealing effects, but also due to point-defect generation at SiO/Si interface.