Conceptual design of JRR-3 automated silicon irradiation device for Neutron-Transmutation-Doped Silicon Semiconductor (NTD-Si) production

Hirose, Akira; Wada, Shigeru; Kusunoki, Tsuyoshi 

Neutron-Transmutation-Doped Silicon Semiconductor (NTD-Si) has good properties for the power device. In recent years the demand of NTD-Si has increased significantly due to mass production of hybrid-cars. We have been investigated the expansion technology of the NTD-Si productivity using the research reactors JRR-3, JRR-4 and JMTR of JAEA in order to meet the demand. The conceptual design of the automated silicon irradiation device using the JRR-3 Uniformity Irradiation System was carried out as one of the effective measures. After a Si ingot is irradiated once, it is turned over manually and irradiated again in order to irradiate the ingot uniformly. With the conventional equipment, it is necessary to wait radioactivity of the ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. The waiting procedure takes 48 hours or more. Because the automated NTD-Si irradiation device reduces the manual operation process and the waiting time, it is effective to shorten the waiting period. This report is concerning the conceptual design of the automated silicon irradiation device for the JRR-3 Uniformity Irradiation System.