Effect of Al and Be ions pre-implantation on formation and growth of helium bubbles in SiC/SiC composites

Taguchi, Tomitsugu; Igawa, Naoki   ; Wakai, Eiichi  ; Jitsukawa, Shiro; Snead, L. L.*; Hasegawa, Akira*

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si, 1.0-MeV He and 340-keV H) at 1000 C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He bubbles in the fiber was slightly increased by implanting Al or Be ions. These results suggest that Al or Be as transmutation products and impurities may accelerate the growth of He bubbles in SiC/SiC composites under fusion reactor conditions.