Analysis of transient current in SiC diodes irradiated with MeV ions

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*

no abstracts in English

Language	:	English
Journal	:	Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7)
Volume	:
Number	:
Pages	:	p.115 - 118
Publication Year/Month	:	2006/10
Meeting title	:	7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7)
Held date	:	2006/10
Location (city)	:	Takasaki
Location (country)	:	Japan
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DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
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Registration No. : BB20063317
JAEA Abstracts No. : 35000693
Paper Submission No. : 2182

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