Activation energy of oxygen dissociation reaction in SiO $_{2}$ /4H-SiC(0001) interface

Onuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*

no abstracts in English

Language	:	Japanese
Journal	:
Volume	:
Number	:
Pages	:
Publication Year/Month	:
Meeting title	:	2007年(平成19年)春季第54回応用物理学関係連合講演会
Held date	:	2007/03
Location (city)	:	相模原
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	電力中央研究所

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : BB20063349
JAEA Abstracts No. :
Paper Submission No. :

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.

Activation energy of oxygen dissociation reaction in SiO/4H-SiC(0001) interface

Activation energy of oxygen dissociation reaction in SiO $_{2}$ /4H-SiC(0001) interface