TIBIC measurement of 6H-SiC pn diodes irradiated with oxygen and nickel ions

Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Mishima, Kenta; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Kamiya, Tomihiro; Sakamoto, Airi*; Nakano, Itsuo*; Kawano, Katsuyasu*

Transient currents induced in 6H-SiC np by Ni and O ions were evaluated using Transient Ion Beam Induced Current (TIBIC). Charge Collection Efficiency (CCE) was estimated from TIBIC signals. As a results, CCE for 9 MeV-Ni and 9 MeV-O-irradiated 6H-SiC np diodes are 75 and 90 % respectively. From a simulation of ion tracks in which charge distribution and Auger recombination are considered, the origin of the decrease in CCE is explained in terms of the recombination of electron-hole pairs by Auger recombination in high ion beam induced carrier concentration.