Pressure and temperature dependence of cuprous oxide nucleation on Cu(410)

Okada, Michio*; Vattuone, L.*; Moritani, Kosuke*; Savio, L.*; Teraoka, Yuden; Kasai, Toshio*; Rocca, M.*

We studied the oxidation of Cu(410) for thermal O exposure and using High-resolution Electron Energy-loss Spectroscopy. CuO is identified by loss peaks at 19 meV and 79 meV. By monitoring the intensity of the latter, we find that CuO formation depends strongly on surface temperature and on O pressure and is kinetically limited by the impinging O flux. Thermally activated step roughening, leading to detachment of Cu adatoms from the step edge, acts as a source of mobile Cu atoms allowing for subsequent nucleation of CuO patches.