Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam

Chen, Z. Q.*; Kawasuso, Atsuo

ZnO single crystals were implanted with with He ions with energies of 20-100keV to a dose of 4E+15 cm $^{-3}$ . To study, implantation-induced defects, the Doppler broadeing measurements of positron-electron annihilation radiation were performed using a positron beam. As a result, it was found that divacancies and further vacancy clusters were generated due to implantation. It was found that upon annealing at 400 $^{circ}$ C He atoms start to occupy vacancy clusters. After further annealing at 600 $^{circ}$ C, vacancy cluster sizes increased. At 800 $^{circ}$ C, He atoms desorbed from vacancy clusters and vacancy clusters also disappeared.

Language	:	English
Journal	:	Acta Physica Sinica
Volume	:	55
Number	:	8
Pages	:	p.4535 - 4540
Publication Year/Month	:	2006/08
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Paper URL	:	https://doi.org/10.7498/aps.55.4353
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Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
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Registration No. : AA20060923
JAEA Abstracts No. : 35000507
Paper Submission No. : 1980

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