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Report No.
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Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam

Chen, Z. Q.*; Kawasuso, Atsuo

ZnO single crystals were implanted with with He ions with energies of 20-100keV to a dose of 4E+15 cm$$^{-3}$$. To study, implantation-induced defects, the Doppler broadeing measurements of positron-electron annihilation radiation were performed using a positron beam. As a result, it was found that divacancies and further vacancy clusters were generated due to implantation. It was found that upon annealing at 400 $$^{circ}$$C He atoms start to occupy vacancy clusters. After further annealing at 600 $$^{circ}$$C, vacancy cluster sizes increased. At 800 $$^{circ}$$C, He atoms desorbed from vacancy clusters and vacancy clusters also disappeared.

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