-FeSi
grown using high-purity FeSi sourceGoto, Kohei*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Esaka, Fumitaka 
; Uchikoshi, Masahito*; Isshiki, Minoru*
We have investigated the effect of FeSi source purity on the electrical property of -FeSi grown from solution. A high purity FeSi source avoided a contamination of Cu and W metals was synthesized by melting a high purity Fe (5N) and Si (5N-up) in a quartz ampoule. The -FeSi crystals grown using the high purity FeSi and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi showed p-type. From the SIMS analysis of the grown crystals, we found that dominant impurity concentrations in the p-type crystals were higher than those in the n-type ones.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 515 |
Number |
: | 22 |
Pages |
: | p.8263 - 8267 |
Publication Year/Month |
: | 2007/08 |
Meeting title |
: | Asia-Pacific Conference on Semiconducting Silicides (APAC-SILICIDE 2006) |
Held date |
: | 2006/07 |
Location (city) |
: | Kyoto |
Location (country) |
: | Japan |
Paper URL |
: |
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Keywords |
: | no keyword |
Research Facility |
: |
Accesses |
: |
- Accesses |
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InCites™ |
: |
Percentile:55.93 Category:Materials Science, Multidisciplinary |
Altmetrics |
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