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High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs

Shimada, Kenya*; Higashiguchi, Mitsuharu*; Arita, Masashi*; Namatame, Hirofumi*; Taniguchi, Masaki*; Fujimori, Shinichi  ; Saito, Yuji ; Fujimori, Atsushi; Takata, Yasutaka*; Shin, S.*; Kobayashi, Keisuke*; Ikenaga, Eiji*; Yabashi, Makina*; Tamasaku, Kenji*; Nishino, Yoshinori*; Miwa, Daigo*; Ishikawa, Tetsuya*; Sasakawa, Tetsuya*; Takabatake, Toshiro*

We have examined the electronic states of the Kondo semiconductor CeRhAs and the semimetal CeRhSb by means of high-resolution photoemission spectroscopy using tunable photon energies from 40 up to 5948 eV. On the basis of the photon-energy dependence ofthe photoionization cross-section, we have elucidated the p-d-f hybridized states in these compounds.

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