High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs

Shimada, Kenya*; Higashiguchi, Mitsuharu*; Arita, Masashi*; Namatame, Hirofumi*; Taniguchi, Masaki*; Fujimori, Shinichi ; Saito, Yuji ; Fujimori, Atsushi; Takata, Yasutaka*; Shin, S.*; Kobayashi, Keisuke*; Ikenaga, Eiji*; Yabashi, Makina*; Tamasaku, Kenji*; Nishino, Yoshinori*; Miwa, Daigo*; Ishikawa, Tetsuya*; Sasakawa, Tetsuya*; Takabatake, Toshiro*

We have examined the electronic states of the Kondo semiconductor CeRhAs and the semimetal CeRhSb by means of high-resolution photoemission spectroscopy using tunable photon energies from 40 up to 5948 eV. On the basis of the photon-energy dependence ofthe photoionization cross-section, we have elucidated the p-d-f hybridized states in these compounds.

Language	:	English
Journal	:	Journal of Magnetism and Magnetic Materials
Volume	:	310
Number	:	2, Part1
Pages	:	p.e57 - e58
Publication Year/Month	:	2007/03
Meeting title	:	17th International Conference on Magnetism (ICM 2006)
Held date	:	2006/08
Location (city)	:	Kyoto
Location (country)	:	Japan
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	広島大学

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Registration No. : BB20063661
JAEA Abstracts No. : 35001018
Paper Submission No. : 2577

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