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Real-time photoelectron spectroscopy study on the oxidation-induced strained Si atom at SiO$$_{2}$$/Si(001) interface; Dependence on oxidation temperature

Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

To verify experimentally the unified model of Si oxidation reactions mediated by point defects generation (emitted Si atoms + vacancies) due to oxidation-induced strain, real-time photoelectron spectroscopy using synchrotron radiation was employed to monitor the oxidation-induced strained Si atom at SiO$$_{2}$$/Si interface, oxidation states, and the oxide thickness simultaneously during oxidation on n-type Si(001) surfaces with O$$_{2}$$ gas. Upon introducing O$$_{2}$$ gas at 300$$^{circ}$$C, both Si$$alpha$$ and Si$$beta$$ increase with time and then Si$$beta$$ decreases gradually at first oxide layer, while Si$$alpha$$ continues to increase, but with a decreased rate. It is found that the amount of Si$$beta$$ and Si$$alpha$$ at the completion of first oxide layer growth decrease gradually with raising temperature from 300 to 600$$^{circ}$$C, where oxide grows in the Langmuir-type adsorption manner. These results indicate that the oxidation-induced strain decreases with surface temperature.

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