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Report No.

Effect of neutron irradiation on the electrical transport of boron nanobelt devices

Kirihara, Kazuhiro*; Kawaguchi, Kenji*; Shimizu, Yoshiki*; Sasaki, Takeshi*; Koshizaki, Naoto*; Kimura, Kaoru*; Yamada, Yoichi; Yamamoto, Hiroyuki; Shamoto, Shinichi  

Isotopic $$^{10}$$B atom has large thermal neutron capture cross section. $$^{7}$$Li atom and $$alpha$$ particle as a product of the neutron reaction can change the electrical transport property of the boron-rich semiconductor because they provide carrier doping and lattice defects. We successfully synthesized catalyst-free single-crystalline boron nanobelts (BNBs) and clarified the electrical transport and photoconduction mechanism of individual nanobelt. The BNB device is promising candidates for solid-state neutron sensors with both high resolution and good discrimination performance between neutron and $$gamma$$-ray. In the presentation, we discuss the performance of thermal neutron detection of BNB devices. Isotopic $$^{10}$$B enriched BNBs was synthesized to detect thermal neutrons efficiently. Electrical conductance of a nanobelt increased to eight times after the thermal neutron irradiation with a dose of 1.8$$times$$10$$^{14}$$ cm$$^{-2}$$ by the neutron reaction of $$^{10}$$B.



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