Characterization of ion beam-induced SiC-OI structures by positron annihilation spectroscopy

Maekawa, Masaki; Yu, R.; Kawasuso, Atsuo

no abstracts in English

Language	:	English
Journal	:	Physica Status Solidi (C)
Volume	:	4
Number	:	10
Pages	:	p.3680 - 3683
Publication Year/Month	:	2007/09
Meeting title	:	11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)
Held date	:	2007/08
Location (city)	:	Manaus
Location (country)	:	Brazil
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1002/pssc.200675822
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:0.07 Category:Physics, Atomic, Molecular & Chemical
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Registration No. : BB20070684
JAEA Abstracts No. : 35001596
Paper Submission No. : 3176

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