Chemical-state-selective observations on Si-SiO at nanometer scale by photoelectron emission microscopy combined with synchrotron radiation

Baba, Yuji  ; Sekiguchi, Tetsuhiro  ; Shimoyama, Iwao   ; Honda, Mitsunori   ; Hirao, Norie*; Deng, J.; Narita, Ayumi

Chemical-state-selective mapping of micro-patterns for silicon compounds has been demonstrated using photoelectron emission microscopy excited by soft X-rays from synchrotron light source. The samples investigated were micro-patterns of silicon oxides, silicon nitrides, and organic silicon compounds. By scanning the X-ray energy around the Si -edge, we succeeded in observing the sub-micron images depending on the valence states. When we annealed the sample, the lateral diffusion was observed from 700C. During the annealing, however, no intermediate valence states were observed at the Si-SiO interfaces. It was elucidated that the diffusion of oxygen induced the sudden changes of the Si valence states from Si to Si without any intermediate valence states. The results for the chemical-state-selective mappings and lateral diffusions are also presented for organic silicon compounds.