Aligned defects behaviour of -FeSi $_{2}$ thin film on Si(100) substrate prepared by ion beam sputter deposition

Sasase, Masato*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Shamoto, Shinichi ; Hojo, Kiichi

Defect formation behavior in the -FeSi $_{2}$ on Si(100) has been discussed by using cross sectional transmission electron microscope.

Language	:	English
Journal	:	Journal of Physics; Conference Series
Volume	:	100
Number	:
Pages	:	p.042016_1 - 042016_4
Publication Year/Month	:	2008/00
Meeting title	:	17th International Vacuum Congress (IVC-17)/13th International Conference on Surface Science (ICSS-13)/International Conference on Nanoscience and Technology (ICN+T2007)
Held date	:	2007/07
Location (city)	:	Stockholm
Location (country)	:	Sweden
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1088/1742-6596/100/4/042016
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	若狭湾エネルギー研究センター

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:76.2 Category:Nanoscience & Nanotechnology
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Registration No. : BB20070862
JAEA Abstracts No. : 36000945
Paper Submission No. : 4253

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Aligned defects behaviour of -FeSi thin film on Si(100) substrate prepared by ion beam sputter deposition

Aligned defects behaviour of -FeSi $_{2}$ thin film on Si(100) substrate prepared by ion beam sputter deposition