Degradation of charge collection efficiency for 6H-SiC diodes by electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*

The 6H-SiC n $^{+}$ p diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 610 $^{16}$ /cm $^{2}$ and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 110 $^{15}$ /cm $^{2}$ , although L decreased to 0.6m from 2.5m by the irradiation. The degradation of CCE was observed at fluences above 510 $^{15}$ /cm $^{2}$ .

Language	:	English
Journal	:	Materials Science Forum
Volume	:	600-603
Number	:	Part 2
Pages	:	p.1043 - 1046
Publication Year/Month	:	2009/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 2007 (ICSCRM 2007)
Held date	:	2007/10
Location (city)	:	Otsu
Location (country)	:	Japan
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Research Facility	:	TIARA(イオン照射研究施設)
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Cooperating Institute	:	岡山大学

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Registration No. : BB20071981
JAEA Abstracts No. :
Paper Submission No. : 24786

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