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Report No.

Degradation of charge collection efficiency for 6H-SiC diodes by electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*

The 6H-SiC n$$^{+}$$p diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 6$$times$$10$$^{16}$$/cm$$^{2}$$ and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 1$$times$$10$$^{15}$$/cm$$^{2}$$, although L decreased to 0.6$$mu$$m from 2.5$$mu$$m by the irradiation. The degradation of CCE was observed at fluences above 5$$times$$10$$^{15}$$/cm$$^{2}$$.



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