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Report No.
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Experimental verification of the unified Si oxidation reaction model, 2; O$$_{2}$$ pressure dependence of interfacial oxidation rate

Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

In this study, real-time XPS was applied to investigating the effect of the rapid O$$_{2}$$ pressure increase on the interfacial oxidation rate in connection with the changes in stress (strain) at the SiO$$_{2}$$/Si(001) interface. The oxidation experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. The photoelectron spectroscopy measurement of O1s and Si2p was performed during oxidation of a p-type Si(001) surface. When the Si surface was completely covered by the oxide, the O$$_{2}$$ pressure was increased to enhance the interfacial oxidation. The O$$_{2}$$ pressure and initial rate of interfacial reaction after O$$_{2}$$ pressure increase shows the linear correlation and its gradient is obtained as 0.5. It is found that the O$$_{2}$$ supply is not the limiting reaction of SiO$$_{2}$$/Si interface oxidation. Based on these results, an interfacial reaction model of oxygen and Si atoms is proposed.

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