Development of micromachining technology in ion microbeam system at TIARA, JAEA

Kamiya, Tomihiro; Nishikawa, Hiroyuki*; Sato, Takahiro; Haga, Junji; Oikawa, Masakazu*; Ishii, Yasuyuki; Okubo, Takeru; Uchiya, Naoyuki; Furuta, Yusuke*

Development of a mask-less ion beam lithography technique for fabricating micro- or nano-meter sized structures has been started at the microbeam systems in the ion accelerator facility of JAEA Takasaki (TIARA) in collaboration with Shibaura Institute of Technology. In order to obtain a high precision measure for microbeam size estimation and lens system optimization, or for improvement of spatial resolution down to 100 nm level, we applied this lithography technique itself combined with the electroplating process to make a Ni relief pattern as an optimum resolution standard to be used in secondary electron imaging. In this work, using this standard, the smallest beam size could be obtained. This paper also discuses on the scattering of ions in the materials influenced to the resolution using a Monte Carlo simulation code.