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Single-domained Si(110)-"16$$times$$2" surface

Yamada, Yoichi; Girard, A.*; Asaoka, Hidehito  ; Yamamoto, Hiroyuki; Shamoto, Shinichi  

Simple surface preparation method for the single-domain of Si(110)-16$$times$$2 utilizing the electromigration is proposed. It is found that the DC electric current along the surface reconstruction rows elongates the rpws. By means of the controlled electromigration, a micrometer-wide, single-domain of 16$$times$$2 surface can be successfully fabricated with nearly perfect reproducibility. The fabricated single-domain of Si(110) is not only useful for future basic researches on this surface, but also has high potential for application due to its strong one-dimensionality.

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