Isolated hydrogen center in wide gap semiconductors studied by SR

Shimomura, Koichiro*; Kadono, Ryosuke*; Nishiyama, Kusuo*; Watanabe, Isao*; Suzuki, Takao*; Pratt, F.*; Oishi, Kazuki; Mizuta, Masashi*; Saito, Mineo*; Chow, K. H.*; Hitti, B.*; Lichti, R. L.*; Miyadera, Haruo*; Ikedo, Yutaka*; Tanaka, Hiroyuki*; Nagamine, Kanetada*

Recent progresses of the studies of isolated hydrogen center in ZnO and GaN by muon spin rotation methods are reported. Preliminary experimental results for shallow muonium hunting as an acceptor in InSb and GaSb are also discussed.

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	376-377
Number	:
Pages	:	p.444 - 446
Publication Year/Month	:	2006/04
Meeting title	:	23rd International Conference on Defects in Semiconductors (ICDS-23)
Held date	:	2005/07
Location (city)	:	Awaji
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.physb.2005.12.114
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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InCites™	:	Percentile:6.64 Category:Physics, Condensed Matter
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Registration No. : BB20071550
JAEA Abstracts No. :
Paper Submission No. : 6954

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