Observation of electronic structures at nanometer scale for silicon compounds by SR-excited PEEM

Baba, Yuji  ; Sekiguchi, Tetsuhiro  ; Shimoyama, Iwao   ; Honda, Mitsunori   ; Hirao, Norie*; Deng, J.

Photoelectron emission microscopy (PEEM) excited by soft X-rays from synchrotron light source has been applied to the nano-scaled observations on electronic structures for silicon compounds. The lateral spacial resolution of the PEEM was about 40 nm. For organic silicon compounds, silicon phthalocyanine dichloride (SiPcCl) molecules were deposited on the gold surface using a mask. At room temperature, periodic bright-and-dark PEEM images were clearly observed by the excitation at the Si K-edge. The brightnesses of the bright and dark regions were plotted as a function of the photon energy. In comparison with the X-ray absorption spectrum of SiPcCl molecules, the electronic structure of each domain in the PEEM image was elucidated at nanometer scale. When we annealed the sample, the lateral diffusion of the deposited layer was in-situ observed at real time.