Photo-EPR study of vacancy-type defects in irradiated -type 4-SiC

Umeda, Takahide*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

We have performed photo-electron paramagnetic resonance (photo-EPR) analyses on four types of fundamental vacancy-related defects in 3MeV electron-irradiated 4-SiC, i.e., carbon vacancies $_{rm C}$ $^{-}$ ), silicon vacancies ( $_{V2a}$ -type $_{rm Si}$ $^{-}$ ), divacancies $_{rm Si}$ $_{rm C}$ $^{0/-}$ ), and carbon antisite-vacancy pairs (C $_{rm Si}$ $_{rm C}$ $^{-}$ ). The photo-induced transitions from their -2 to -1 charged states or from their -1 charged to neutral states were detected in the photon energy range between 0.80 and 1.20 eV. Based on these transitions, we have discussed positions of their defect levels with respect to the conduction band edge.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	600-603
Number	:
Pages	:	p.409 - 412
Publication Year/Month	:	2009/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 2007 (ICSCRM 2007)
Held date	:	2007/10
Location (city)	:	Otsu
Location (country)	:	Japan
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DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	no keyword
Research Facility	:	電子加速器
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Article of JAEA R&D Review	:
Cooperating Institute	:	筑波大学

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Registration No. : BB20072083
JAEA Abstracts No. : 37000041
Paper Submission No. : 5029

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