Super clean sample of URuSi

Matsuda, Tatsuma; Aoki, Dai*; Ikeda, Shugo; Yamamoto, Etsuji  ; Haga, Yoshinori   ; Okuni, Hitoshi*; Settai, Rikio*; Onuki, Yoshichika

In the process of the single crystal growth of actinide compounds, the amount of raw actinide material should be reduced as much as possible. Considering this point, the flux method is one of the most effective methods. In order to develop the new actinide compounds include the filled skutterudite, we have been searching the suitable condition for growing the single crystal. In these trial processes, we have succeeded to grow some of the other single crystals of rare-earth and actinides compounds. For example, the single crystal of UCuSi, UCuGe, ThCuGe, CeCuSi, and YbCuSi were grown by the Sn-flux method. In the case of UCuSi and YbCuSi, the de Haas-van Alphen signals are detected by using these crystals. Recently, we also succeeded in growing the highest quality single crystal of URuSi by the Czochralski-pulling method in a tetra-arc furnace and detecting the de Haas-van Alphen signal.