検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Temperature dependence of the oxidation-induced strain at SiO$$_{2}$$/Si(001) interface studied by XPS using synchrotron radiation

放射光を用いたXPSによるSiO$$_{2}$$/Si(001)界面での酸化誘起歪みの温度依存性

小川 修一*; 吉越 章隆 ; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*

Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

本研究では、Si(001)表面上の第一酸化層成長中の酸化誘起歪みの蓄積を調べるために、第一酸化層のふたつの反応モード、すなわち、573Kでのラングミュア型吸着と923Kでの二次元島成長が、SPring-8のBL23SUでリアルタイムXPS法を用いて調べられた。得られた実験結果から酸化誘起歪みは573Kでの酸化膜界面より923Kでの界面の方が小さいことがわかった。

In this study, to investigate the oxidation-induced strain accumulating during the first oxide layer growth on Si(001) surface, two oxidation reaction modes of the first oxide layer, Langmuir-type adsorption and two-dimensional oxide island growth at 573 K and 923 K, respectively, were comparatively investigated by real-time XPS at the BL23SU of SPring-8. The experimental results obtained suggest that the oxidation-induced strain is smaller at 923 K than at 573 K.

Access

:

- Accesses

InCites™

:

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.