SR-PES and STM observation of metastable chemisorption state of oxygen on Si(110)-162 surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Takahashi, Yuya*; Konno, Atsushi*; Teraoka, Yuden; Yoshigoe, Akitaka ; Asaoka, Hidehito ; Suemitsu, Maki*

The room temperature adsorbed state of oxygen molecules on Si(110)-162 surface and the structural change after a mild annealing has been investigated by synchrotron radiation photoemission spectroscopy. As a result, despite the very small dosage of oxygen, Si $^{2+}$ and Si $^{3+}$ components already appear in addition to Si $^{1+}$ . This is likely to be caused by a selective adsorption of O $_{2}$ molecules into the vicinity of already oxidized sites. After annealing, we found that binding energy of Si $^{2+}$ and Si $^{3+}$ increase and approach to their corresponding peak positions of a thermally-grown oxide, and this increase indicates relaxation of the Si-O bond length and Si-O-Si bond angle of metastable oxygen atoms.

Language	:	English
Journal	:	Applied Surface Science
Volume	:	254
Number	:	19
Pages	:	p.6232 - 6234
Publication Year/Month	:	2008/07
Meeting title	:	5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
Held date	:	2007/11
Location (city)	:	Hachioji
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.apsusc.2008.02.148
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20072989
JAEA Abstracts No. : 36001558
Paper Submission No. : 4831

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