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Report No.

Observations of metastable oxidized state on Si(110)-16$$times$$2 surface using SR-PES and STM

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Kato, Atsushi*; Hasegawa, Satoshi*; Konno, Atsushi*; Suemitsu, Maki*; Yoshigoe, Akitaka ; Teraoka, Yuden; Asaoka, Hidehito  

We have investigated that initial oxidation processes of Si(110) surfaces at room temperature and thermal stability of the oxide layer via synchrotron radiation photoemission spectroscopy (SR-PES) and scanning tunneling microscopy (STM). We found in the SR-PES experiments that metastable oxygen-condensed local structures were formed in the early stage of Si(110) oxidation at room temperature. After thermal annealing of 15 min at 573 K, highly-oxidized components of Si2p spectrum, Si$$^{3+}$$ and Si$$^{4+}$$, were enhanced whereas Si$$^{2+}$$ was decreased. This is due to structural relaxation of the strained metastable oxidation structures on the surface and following change to stable highly-oxidized structures. Furthermore, the structural change from the metastable structure in the surface oxidized at room temperature to the stable cluster structure was directly observed via STM.



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