Real-time monitoring of initial oxidation of Si(110)-162 surface by Si 2p photoemission spectroscopy

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka ; Teraoka, Yuden

Initial oxidation process of Si(110)-162 clean surface has been investigated with synchrotron radiation photoemission spectroscopy. We found that the intensity of the alpha peak, one of the surface core level shifts in the Si 2p photoemission spectra, decreased in the just early stage of oxidation. And it was possible to relate this component with the rapid initial oxidation, which was unique to Si(110) surface. According to recent studies, this component was attributed to the 1st and the 2nd Si layer. We also found that there were significant amount of Si component just after introducing the oxygen gas, which was contrast to the oxidation of Si(001) surface.