12インチNTD-Si照射実験装置に関する概念設計,2; 12インチNTD-Si照射実験装置の機械設計

Conceptual design about the 12-inch NTD-Si irradiation experimental device, 2; Mechanical design of irradiation experimental device for 12-inch NTD-Si ingot

加島 洋一; 八木 理公 ; 渡邊 雅範; 山本 和喜 

Kashima, Yoichi; Yagi, Masahiro; Watanabe, Masanori; Yamamoto, Kazuyoshi

最大12インチ径までの大口径NTD-Si(中性子核変換ドーピングSi)半導体の均一照射技術を開発するため、解析的に得られた均一照射条件の妥当性を確証することのできる照射実験装置をJRR-4に設置する。設置にあたってはさまざまな制約が生じるが、これらの制約を考慮して設計方針を設定し、照射実験装置の機械設計を行った。機械設計の結果、既存装置と干渉せず、解析で得られた照射条件を満足する照射実験装置を製作できる見通しが得られた。

In JRR-4, a irradiation experimental device for 12 inches NTD-Si (Neutron Transmutation Doping Silicon) ingot will be installed to confirm the validity of the uniform irradiation condition which has been derived analytically in order to develop neutron irradiation technology for the large-diameter NTD-Si semiconductor to 12 inches diameter at the maximum. In installation, various limitations occurred, but some design policy was set in consideration of these limitations and the mechanical design of the irradiation experimental device was performed. As the result of mechanical design, it is possible to produce the irradiation experimental device which satisfied the irradiation condition derived by analysis without interfering it with an existing device in the future.