Enhanced annealing of the Z $_{1/2}$ defect in 4H-SiC epilayers

Storasta, L.*; Tsuchida, Hidekazu*; Miyazawa, Tetsuya*; Oshima, Takeshi

A carbon-implantation/annealing method for annealing of defect Z $_{1/2}$ in thick 4H-SiC epilayers was studied. Different implantation doses and annealing temperatures were examined to find the optimum conditions for annealing of Z $_{1/2}$ . As the result, Z $_{1/2}$ defects in epilayer with 100 m were annealed by implanting 300 nm carbon atoms at a concentration of 210 $^{19}$ /cm $^{3}$ and sbsequent annealing at 1800 $^{circ}$ C. By this treatment, the carrier lifetime increased from less than 200 ns to over 1 s at room temperature.

Language	:	English
Journal	:	Journal of Applied Physics
Volume	:	103
Number	:	1
Pages	:	p.013705_1 - 013705_7
Publication Year/Month	:	2008/01
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Paper URL	:	https://doi.org/10.1063/1.2829776
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	電子加速器
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	電力中央研究所

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Registration No. : AA20070941
JAEA Abstracts No. : 36000299
Paper Submission No. : 3626

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Enhanced annealing of the Z defect in 4H-SiC epilayers

Enhanced annealing of the Z $_{1/2}$ defect in 4H-SiC epilayers