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Observation of metastable oxidized state on RT-oxidized Si(110) surface using SR-PES and STM

Togashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito  ; Yoshigoe, Akitaka ; Teraoka, Yuden

Oxygen-adsorbed Si(110)-16$$times$$2 surfaces at room temperature and their thermally-treated surfaces were analyzed by real-time photoemission spectroscopy with synchrotron radiation (SR-PES) and scanning tunneling microscopy (STM). Thermal stability of the oxygen-adsorbed Si(110) surfaces was clearified. By thermal annealing of Si(110) surface exposed to 10L oxygen gas at room temperature, photoemission peak positions of Si$$^{2+}$$ and Si$$^{3+}$$ components were shifted to higher energy side by 0.20eV and 0.12eV,respectively, and reached nearly to those of thermal oxide films. This behaviour is due to change of Si-O-Si bond angle and Si-O bond length. The STM observation for Si(110) surfaces revealed that the oxygen-adsorbed surface structure changed to the condensed oxide structure by thermal annealing. These SR-PES and STM results showed that the oxygen-adsorbed Si(110)-16$$times$$2 structure was metastable and changed to more stable condensed oxide structure by thermal annealing.

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