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Axial orientation of molecular-beam-epitaxy-grown Fe$$_{3}$$Si/Ge hybrid structures and its degradation

Maeda, Yoshihito; Jonishi, Takafumi*; Narumi, Kazumasa; Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Miyao, Masanobu*

The axial orientation of molecular-beam-epitaxy (MBE)-grown Fe$$_{3}$$Si(111)/Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300$$^{circ}$$C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in Fe$$_{3}$$Si. Low-temperature ($$<$$200 $$^{circ}$$C) MBE can realize fully ordered DO$$_{3}$$-Fe$$_{3}$$Si with highly axial orientation [minimum yield ($$chi$$$$_{min}$$)=2.2%]. Postannealing above 400 $$^{circ}$$C results in a composition change and the degradation of axial orientation in the off-stoichiometric Fe$$_{3}$$Si. The significance of stoichiometry with regard to thermal stability and the interfacial quality of Fe$$_{3}$$Si(111)/Ge(111) hybrid structures was also discussed.

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Category:Physics, Applied

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