Electronic structure of CeIrSi $_{3}$ and LaIrSi $_{3}$ by angle-resolved photoemission spectroscopy

Toshimitsu, Takafumi; Okochi, Takuo; Yasui, Akira; Kobayashi, Masaki*; Takeda, Yukiharu ; Okane, Tetsuo ; Saito, Yuji ; Fujimori, Atsushi; Yamagami, Hiroshi; Miyauchi, Yuichiro*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika*

no abstracts in English

Language	:	Japanese
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Meeting title	:	日本物理学会第63回年次大会
Held date	:	2008/03
Location (city)	:	東大阪
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20073536
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Electronic structure of CeIrSi and LaIrSi by angle-resolved photoemission spectroscopy

Electronic structure of CeIrSi $_{3}$ and LaIrSi $_{3}$ by angle-resolved photoemission spectroscopy