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Conceptual design of experimental equipment for large-diameter NTD-Si

Yagi, Masahiro; Watanabe, Masanori; Oyama, Koji; Yamamoto, Kazuyoshi; Komeda, Masao; Kashima, Yoichi; Yamashita, Kiyonobu

Neutron Transmutation Doping Silicon (NTD-Si) is expected to save effectively the consumption energy when an Insulation Gate Bipolar Transistor (IGBT) with NTD-Si is applied to electrical inverter of hybrid car. Therefore, development of neutron irradiation technology for the large-diameter silicon up to 12 inches diameter will contribute greatly to increasing production of NTD-Si and cost reduction. In our development project, an irradiation-experimental equipment is designed by using the Monte Carlo neutron transportation calculation code (MCNP5) in order to improve the neutron flux distribution of the radial direction on 12 inches NTD-Si. As the results of the calculations, the neutron absorption reaction ratio of the circumference to the center was within 1.09 by use of the thermal neutron filter which covers the surface of the silicon ingot. The flatting effect of neutron flux distribution for the 12 inches diameter silicon will be confirmed experimentally by using the equipment, which will be installed in the Japan Research Reactor No.4 (JRR-4) in 2009.

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Category:Chemistry, Inorganic & Nuclear

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